Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and ...
SemiQ Inc has expanded its QSiC™ Dual3 family of half-bridge silicon carbide MOSFET modules with new 1700 V options and ...
Integrated Device Features Half-Bridge MOSFETs With Best in Class RDS(ON) in Compact Transfer-Mold FlatPAK HC0 PackageMALVERN ...
ON Semiconductor has announced two 1200-V silicon carbide (SiC) MOSFET 2-pack modules for the electric vehicle (EV) market, ahead of APEC 2021. The SiC MOSFET modules, based on planar technology, can ...
SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
SemiQ has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact system-level designs at large scale. 1200 V SiC ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
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Advanced Power Technology Europe has announced the addition of 1000-V and 1200-V MOSFET modules to the existing product range in SP4 and SP6 packages. These modules are offered in single switch, buck, ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...