GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors—today announced availability of its 1200 ...
Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024. Transphorm, the GaN ...
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