IEEE

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

Abstract: The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-i-n diodes grown on bulk GaN substrates have ...
IEEE

On the Mechanism of Electromechanical Breakdown of Solids in Strongly Nonuniform Fields in Absence of Ionization and Space Charges

Abstract: Electric forces acting on a neutral matter in nonuniform electric fields may generate mechanical stresses even in the absence of charged species. This mechanism is invoked here as a factor ...
C&EN

Investigation of Ionization Potential in Quantum Dots Using the Stratified Stochastic Enumeration of Molecular Orbitals Method

You are free to share (copy and redistribute) this article in any medium or format and to adapt (remix, transform, and build upon) the material for any purpose, even commercially within the parameters ...
PNAS

Quantifying the partial ionization effect of gold in the transition region between condensed matter and warm dense matter

Contributed by Ho-Kwang Mao; received January 3, 2023; accepted April 14, 2023; reviewed by Suxing Hu and Dominik Kraus Insights into the ionization of solids under extreme conditions play a critical ...
Compoundsemiconductor.net

Giving GaN a superjunction

Today’s GaN power devices are well-established, generating significant sales in consumer electronics. They are widely deployed to block several hundred volts, with the 650 V enhancement-mode HEMT ...
C&EN

Nanoscale Single-Cell Mass Spectrometry Imaging via Tapered Fiber Projection Laser Desorption/Ionization Mass Spectrometry

Ministry of Education (MOE) Key Laboratory of Spectrochemical Analysis and Instrumentation, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China ...