Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
Abstract: In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top ...
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